ON THE ANNEALING OF DAMAGE PRODUCED BY COPPER ION IMPLANTATION OF SILICON SINGLE CRYSTALS.CHADDERTON LT; WHITTON JL.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 23; NO 1; PP. 63-66; BIBL. 14 REF.Article

OXIDATION OF SILICIDE THIN FILMS: TISI₂D'HEURLE F; IRENE EA; TING CY et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 361-363; BIBL. 15 REF.Article

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DETERMINATION OF ARSENIC, ANTIMONY, AND BISMUTH IN SILICON USING 200 KEV ALPHA -PARTICLE BACKSCATTERINGHNATOWICZ V; KVITEK J; KREJCI P et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 323-328; ABS. GER; BIBL. 8 REF.Article

OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICONJIANN RUEY CHEN; YUEN CHUNG LIU; SHENG DEH CHU et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 355-389; BIBL. 32 REF.Article

DETERMINATION-OF THE DEPTH DISTRIBUTION OF IMPLANTED HELIUM ATOMS IN NIOBIUM BY RUTHERFORD BACKSCATTERING.ROTH J; BEHRISCH R; SCHERZER BMU et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 1; PP. 643-644; BIBL. 8 REF.Article

RUTHERFORD BACKSCATTERING EVIDENCE FOR SOLID PHASE LASER ANNEALING OF CORNING 7059 GLASS AND ZNO THIN FILMSSUGHADRA DUTTA; JACKSON HE; BOYD JT et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2125-2126; BIBL. 5 REF.Article

THERMAL OXIDATION OF SILICON STUDIED BY HIGH RESOLUTION RUTHERFORD BACKSCATTERINGGRANT WA; CHRISTODOULIDES CE; POGARIDES DC et al.1979; J. RADIOANAL. CHEM.; CHE; DA. 1979; VOL. 48; NO 1-2; PP. 277-286; BIBL. 11 REF.Article

RBS MEASUREMENTS OF THE NITROGEN CONCENTRATION IN DIAMONDSKATERN A; BURGEMEISTER EA; WESTENDORP JFM et al.1983; MATERIALS LETTERS; ISSN 0167-577X; NLD; DA. 1983; VOL. 2; NO 1; PP. 71-73; BIBL. 17 REF.Article

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THERMAL OXIDATION OF NIOBIUM SILICIDE THIN FILMSCHOW TP; HAMZEH K; STECKL AJ et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2716-2719; BIBL. 15 REF.Article

ION BEAM ANNEALED AS⁺ IMPLANTED SILICONHEMMENT PLF; MAYDELL ONDRUSZ E; SCOVELL PD et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 57-59; BIBL. 9 REF.Article

DOSE RATE EFFECTS IN INDIUM IMPLANTED GAAS.TINSLEY AW; STEPHENS GA; NOBES MJ et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 23; NO 3; PP. 165-169; BIBL. 20 REF.Article

ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPERLATTICESCHU WK; SARIS FW; CHANG CA et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1999-2010; BIBL. 23 REF.Article

SODIUM HALIDE SPUTTERING BY H⁺, HE⁺, AR⁺ IONSBIERSACK JP; SANTNER E.1982; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 64; NO 1-4; PP. 97Article

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SI IMPLANTATION IN GAASBHATTACHARYA RS; RAI AK; YEO YK et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2329-2337; BIBL. 7 REF.Article

SUBSTRATE HEATING EFFECTS IN CO₂ LASER ANNEALING OF ION-IMPLANTED SILICONBLOMBERG M; NAUKKARINEN K; TUOMI T et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2327-2328; BIBL. 7 REF.Article

THERMODYNAMIC AND KINETIC PROPERTIES OF INDIUM-IMPLANTED SILICON. I: MODERATE TEMPERATURE RECOVERY OF THE IMPLANT DAMAGE AND METASTABILITY EFFECTSCEROFOLINI GF; FERLA G; PIGNATEL GU et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 101; NO 3; PP. 263-273; BIBL. 27 REF.Article

CHARACTERIZATION OF LPCVD AND THERMAL SILICON NITRIDE FILMSHABRAKEN F; KUIPER T; VAN OOSTROM T et al.1981; ACTA ELECTRONICA; ISSN 0001-558X; FRA; DA. 1981-1982; VOL. 24; NO 3; PP. 203-215; ABS. FRE/GER; BIBL. 40 REF.Article

LASER ASSISTED DOPING OF N-GAAS FROM SN EVAPORATED FILMSPEARTON SJ; LAWSON EM.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 1; PP. K63-K66; BIBL. 5 REF.Article

A DIFFUSION MARKER IN AU/SN THIN FILMS = MARQUEUR DE DIFFUSION DANS DES COUCHES MINCES AU/SNGREGERSEN D; BUENE L; FINSTAD T et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 1; PP. 95-102; BIBL. 15 REF.Article

COMPOUND SEMICONDUCTORS SURFACE CHARACTERIZATION BY HIGH RESOLUTION RUTHERFORD BACKSCATTERINGHAGE ALI M; SIFFERT P.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 166; NO 3; PP. 411-418; BIBL. 13 REF.Article

DETECTION AND MEASUREMENT OF THE DEPTH DISTRIBUTION OF LIGHT ELEMENTS IN MATERIALS WITH A ⁶LI BEAM.L'ECUYER J; BRASSARD C; CARDINAL C et al.1977; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1977; VOL. 140; NO 2; PP. 305-314; BIBL. 5 REF.Article